Produk

Silicon Carbide Epitexy


Persiapan epitaries carbide berkualitas tinggi gumantung ing teknologi lan peralatan lan peralatan sing apik. Saiki, metode pertumbuhan epitails epitails sing paling akeh digunakake yaiku deposisi uap kimia (CVD). Nduwe kaluwihan kontrol trenyun film ketebalan epitise lan konsentrasi, tingkat pertumbuhan moderat, kontrol proses kanthi otomatis, lan liya-liyane, lan minangka teknologi sing bisa dipercaya kanthi komersial.


Silikon Carbide CVD Epitexy umume ngetrapake tembok panas utawa peralatan cvd tembok, sing njamin lampahing epitimo 4h kristal, ing antarane negara aliran udara sing dhuwur, bisa uga ana ing antarane tingkat aliran udara lan reaktor struktur vitor.


Ana telung pratondho utama kanggo kualitas tungku epitixial, sing pertama yaiku kinerja pertumbuhan ECitoxial, kalebu keseranan kerempat, kanthi nggunakake keseragaman, tingkat kekurangan; Sing nomer loro yaiku kinerja suhu saka peralatan kasebut dhewe, kalebu tingkat pemanasan / adhem, suhu maksimal, keseragaman suhu; Pungkasan, kinerja biaya peralatan kasebut dhewe, kalebu rega lan kapasitas unit siji.



Telung jinis tungku wutah epitoxial lan inti aksesoris inti


CVD tembok panas cvd (model khas PE1O6 saka perusahaan LPE PE1O6 saka LPE Planet CVD (dituduhake dening model cvd tembok (sing khas - minangka model sing paling panas ing AIxtron G5ww) minangka solusi teknis epitraam sing wis diwujudake ing aplikasi komersial ing tahapan iki. Telung piranti teknis uga duwe ciri dhewe lan bisa dipilih miturut permintaan. Struktur kasebut dituduhake kaya ing ngisor iki:


Komponen inti sing cocog yaiku:


(a) bagean inti utama horisontal part- setengah bagean kasusun saka

Insulasi Downtream

Insulasi utama sisih ndhuwur

Halfmoon ndhuwur

Penebat hulu

Piece Transisi 2

Piece Transisi 1

Nozzle Air njaba

Torkel tapered

Nozzle gas Outer argon

Nozzzle gas Argon

WAFER Dhukungan piring

Pin Center

Pengawal Pusat

Tutup Perlindungan Downstream

Tutup perlindungan tengen mudhun

Tutup pangreksan kiwa

Tutup Perlindungan Tengen Upstream

Tembok sisih

Cincin grafit

Perlindungan sing dirasakake

Nyengkuyung krasa

Blok kontak

Silinder outlet gas



(b) jinis planet tembok anget

Disk Planetik SIC lapisan & disk planet planet


(c) jinis tembok teyeng-termal


NUFLare (Jepang): Perusahaan iki nawakake tungku vertikal vertikal dual-ramab sing nambah kanggo ngasilake produksi. Peralatan kasebut duwe rotasi kanthi cepet nganti 1000 révolusi saben menit, sing regane migunani banget kanggo keseragam epitoxial. Kajaba iku, arah AirFlow beda karo peralatan liyane, kanthi vertikal mudhun, saéngga nyuda partikel partikel lan nyuda kemungkinan tetesan partikel mudhun ing wafer partikel. Kita nyedhiyakake komponen grafit sing ditutupi ing inti kanggo peralatan iki.


Minangka supplier komponen peralatan epitaksi SIC, Sikmikondduktor setya menehi pelanggan komponen kanthi kualitas tinggi kanggo ndhukung sukses epitexy SIC.



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Wangsulan MOCVD EPITITINXIAL

Wangsulan MOCVD EPITITINXIAL

Vetek Semiconduktor wis melu industri wutah epitonxial kanggo wektu sing suwe lan duwe pengalaman sing sugih lan keahlian proses ing produk Susceptor Wafer Epitoxial. Dina iki, produsen dokter vetek wis dadi produsen lan suplemen epiteptor epiteptor epiteptor china, lan para peladaran wafer sing diwenehake nduweni peran penting kanggo manufaktur wafers Gan Epitacial lan produk liyane.
Cincin sing ditutupi tungku

Cincin sing ditutupi tungku

Tungku vertikal ring ditutupi SiC minangka komponen sing dirancang khusus kanggo tungku vertikal. VeTek Semiconductor bisa nindakake sing paling apik kanggo sampeyan ing babagan bahan lan proses manufaktur. Minangka Produsèn anjog lan supplier saka tungku Vertikal SiC dilapisi ring ing China, VeTek Semiconductor manteb ing ati sing kita bisa nyedhiyani sampeyan karo produk lan layanan paling apik.
Pembawa wafer sing dilapisi SiC

Pembawa wafer sing dilapisi SiC

Minangka pemasok lan pabrikan wafer sing dilapisi SiC sing misuwur ing China, operator wafer dilapisi SiC VeTek Semiconductor digawe saka grafit lan lapisan CVD SiC sing berkualitas tinggi, sing nduweni stabilitas super lan bisa digunakake kanggo wektu sing suwe ing umume reaktor epitaxial. VeTek Semiconductor nduweni kemampuan pangolahan sing unggul ing industri lan bisa nyukupi macem-macem syarat khusus pelanggan kanggo operator wafer sing dilapisi SiC. VeTek Semiconductor ngarepake nggawe hubungan kerjasama jangka panjang karo sampeyan lan tuwuh bebarengan.
Susceptor Epiteptor CVD SIC SIC SIC

Susceptor Epiteptor CVD SIC SIC SIC

Susceptor Epitonduktor Vetek Sik Sikus Susceportor minangka alat sing dirancang kanthi tliti sing dirancang kanggo penanganan wafer lan pangolahan semikonduktor. Susceptor Epitoris SIC Coating iki nduweni peran penting kanggo promosi tuwuhing film tipis, epilayer, lan lapisan liyane, lan bisa ngendhaleni suhu lan bahan bisa dikendhaleni. Sugeng pitakon luwih dhisik.
Cincin lapisan CVD SiC

Cincin lapisan CVD SiC

Cincin lapisan SIC CVD minangka salah sawijining bagean penting saka bagean setengah. Bebarengan karo bagean liyane, mbentuk kamar reaksi wutah SIC Epitoxial. Vetek Semiconduktor minangka produsen cemara CVD Coating SIC CLEEFIERS lan SUPERI. Miturut syarat desain pelanggan, kita bisa nyedhiyani cincin lapisan CVD sing cocog karo rega sing paling kompetitif. Vetek semiconduktor ngarepake dadi mitra jangka panjang ing China.
Bagean grafit grafit sic lapisan

Bagean grafit grafit sic lapisan

Minangka produsen lan supplier semikonduktor profesional, VeTek Semiconductor bisa nyedhiyakake macem-macem komponen grafit sing dibutuhake kanggo sistem pertumbuhan epitaxial SiC. Bagean grafit halfmoon lapisan SiC iki dirancang kanggo bagean mlebu gas saka reaktor epitaxial lan duwe peran penting kanggo ngoptimalake proses manufaktur semikonduktor. VeTek Semiconductor tansah ngupayakake nyedhiyakake pelanggan kanthi produk kualitas paling apik kanthi rega sing paling kompetitif. VeTek Semiconductor ngarepake dadi mitra jangka panjang sampeyan ing China.

Veteksemicon silicon carbide epitaxy is your advanced procurement option for producing high-performance 4H-SiC and 6H-SiC epitaxial layers used in wide bandgap semiconductor devices. SiC epitaxy enables the formation of defect-controlled, dopant-engineered epitaxial layers critical for high-power, high-frequency, and high-temperature electronic devices.


Our offering includes specialized components such as SiC epitaxial susceptors, SiC-coated wafer holders, and epitaxy process rings, tailored for use in horizontal and vertical MOCVD and CVD reactors, including platforms by Veeco, Aixtron, and LPE. Veteksemicon’s parts are coated with high-purity CVD SiC, ensuring chemical compatibility, temperature uniformity, and minimal contamination during epitaxial layer growth.


Silicon carbide epitaxy is essential for fabricating power MOSFETs,  IGBTs, and RF components, particularly in automotive, energy, and aerospace applications. The epitaxial process requires extremely precise control over doping concentration, layer thickness, and crystallographic orientation, which is why substrate compatibility and thermal stability of reactor parts are critical.


Relevant terms in this category include 4H-SiC epitaxial wafer, low-defect-density epitaxy, SiC epi-ready substrates, and wide bandgap semiconductors. Veteksemicon supports both research-scale and volume production needs with stable, repeatable, and thermally robust component solutions.


To learn more about our silicon carbide epitaxy support materials, visit the Veteksemicon product detail page or contact us for detailed specifications and engineering support.


Minangka Produsen lan supplier profesional Silicon Carbide Epitexy ing China, kita duwe pabrik dhewe. Apa sampeyan mbutuhake layanan khusus kanggo nyukupi kabutuhan wilayah tartamtu utawa pengin tuku sing digawe lan awet sing digawe ing China, sampeyan bisa ninggalake pesen.
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