Silicon Carbide Epitexy

Persiapan epitaries carbide berkualitas tinggi gumantung ing teknologi lan peralatan lan peralatan sing apik. Saiki, metode pertumbuhan epitails epitails sing paling akeh digunakake yaiku deposisi uap kimia (CVD). Nduwe kaluwihan kontrol trenyun film ketebalan epitise lan konsentrasi, tingkat pertumbuhan moderat, kontrol proses kanthi otomatis, lan liya-liyane, lan minangka teknologi sing bisa dipercaya kanthi komersial.

Silikon Carbide CVD Epitexy umume ngetrapake tembok panas utawa peralatan cvd tembok, sing njamin lampahing epitimo 4h kristal, ing antarane negara aliran udara sing dhuwur, bisa uga ana ing antarane tingkat aliran udara lan reaktor struktur vitor.

Ana telung pratondho utama kanggo kualitas tungku epitixial, sing pertama yaiku kinerja pertumbuhan ECitoxial, kalebu keseranan kerempat, kanthi nggunakake keseragaman, tingkat kekurangan; Sing nomer loro yaiku kinerja suhu saka peralatan kasebut dhewe, kalebu tingkat pemanasan / adhem, suhu maksimal, keseragaman suhu; Pungkasan, kinerja biaya peralatan kasebut dhewe, kalebu rega lan kapasitas unit siji.

Telung jinis tungku wutah epitoxial lan inti aksesoris inti

CVD tembok panas cvd (model khas PE1O6 saka perusahaan LPE PE1O6 saka LPE Planet CVD (dituduhake dening model cvd tembok (sing khas - minangka model sing paling panas ing AIxtron G5ww) minangka solusi teknis epitraam sing wis diwujudake ing aplikasi komersial ing tahapan iki. Telung piranti teknis uga duwe ciri dhewe lan bisa dipilih miturut permintaan. Struktur kasebut dituduhake kaya ing ngisor iki:

Komponen inti sing cocog yaiku:

(a) bagean inti utama horisontal part- setengah bagean kasusun saka

Insulasi Downtream

Insulasi utama sisih ndhuwur

Halfmoon ndhuwur

Penebat hulu

Piece Transisi 2

Piece Transisi 1

Nozzle Air njaba

Torkel tapered

Nozzle gas Outer argon

Nozzzle gas Argon

WAFER Dhukungan piring

Pin Center

Pengawal Pusat

Tutup Perlindungan Downstream

Tutup perlindungan tengen mudhun

Tutup pangreksan kiwa

Tutup Perlindungan Tengen Upstream

Tembok sisih

Cincin grafit

Perlindungan sing dirasakake

Nyengkuyung krasa

Blok kontak

Silinder outlet gas

(b) jinis planet tembok anget

Disk Planetik SIC lapisan & disk planet planet

(c) jinis tembok teyeng-termal

NUFLare (Jepang): Perusahaan iki nawakake tungku vertikal vertikal dual-ramab sing nambah kanggo ngasilake produksi. Peralatan kasebut duwe rotasi kanthi cepet nganti 1000 révolusi saben menit, sing regane migunani banget kanggo keseragam epitoxial. Kajaba iku, arah AirFlow beda karo peralatan liyane, kanthi vertikal mudhun, saéngga nyuda partikel partikel lan nyuda kemungkinan tetesan partikel mudhun ing wafer partikel. Kita nyedhiyakake komponen grafit sing ditutupi ing inti kanggo peralatan iki.

Minangka supplier komponen peralatan epitaksi SIC, Sikmikondduktor setya menehi pelanggan komponen kanthi kualitas tinggi kanggo ndhukung sukses epitexy SIC.

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Pemegangan Carbide Carbide Coating Wefer

Sing nduwèni karbida Carbide Carbide Carbide Carkon Wefer dening VetekSemicon direkayasa kanggo presisi lan kinerja ing proses semikonduktor sing maju kayata moccvd, lan panyebaran suhu sing dhuwur, lan suhu suhu dhuwur. Kanthi lapisan SIC sing seragam, sing duwe seragam iki njamin konduktivitas termal sing luar biasa, inertness kimia, lan kekuatan mekanik, penting kanggo kontaminasi-dhuwur-kontaminasi-ditindhes.

Ndeleng Liyane >> Kirim Pitakonan >>

Susceptor wafer wafer wafer wafer

Susceptor waffer cVD Coated VetekSemicon minangka solusi sing nglereni kanggo mriksa Épitoxial, nawakake kesucian ultra-dhuwur (stabilitas ICP-e10 sing apik banget kanggo gan, sic, lan lapisan eCP-basis sing luar biasa. Engineered kanthi teknologi CVD Precision CVD, Ndhukung 6 "/ 8" / 12 "Wafers, njamin stres termal minimal, lan nganggo suhu sing ekstrem nganti 1600 ° C.

Ndeleng Liyane >> Kirim Pitakonan >>

Dering Sealing SIC Kanggo Epitexy

Cincin Sealing Coated SIC kita kanggo epitexy minangka komponen pengecapan kinerja kanthi dhuwur utawa karbon-karbis sing dilapisi karo pendhudhuk vapor grafit kanthi resistensi uap sing ekstrem (E.g., MOCVD, MBE).

Ndeleng Liyane >> Kirim Pitakonan >>

Single Wafer Epi Graphite Untertaker

VetekSemicon WaFer Epi Graphite Susceptor dirancang kanggo dhuwur-karbida (SIC), Gallikum Nitride (Gan) lan proses epitonxial sing tliti banget ing produksi massage.

Ndeleng Liyane >> Kirim Pitakonan >>

CVD Fokus CVD

Vetek Semiconduktor minangka produsen domestik sing utama lan pemasok cincin fokus CVD, darmabakti kanggo nyedhiyakake solusi produk sing dhuwur, linuwih dhuwur kanggo industri semikonduktor. Cincin fokus vetek semikonduktor CVD semikonduktor nggunakake teknologi kimia kimia maju (CVD) sing apik, duwe resistensi suhu sing apik, resistensi korosi lan konduktivitas termal, lan digunakake digunakake ing proses litografi semikonduktor. Pitakon sampeyan mesthi tampi.

Ndeleng Liyane >> Kirim Pitakonan >>

Komponen AIxtron G5 + Ceiling

Vetek Semiconduktor wis dadi supplier kanggo ngemot akeh peralatan mocvd kanthi kapabilitas pangolahan sing unggul. Komponen Ceiling AIxtron G5 + Ceiling minangka salah sawijining produk paling anyar, sing meh padha karo komponen AIxtron asli lan wis nampa umpan balik sing apik saka pelanggan. Yen sampeyan butuh produk kaya, hubungi rawuh ing semikonduktor!

Ndeleng Liyane >> Kirim Pitakonan >>

Veteksemicon silicon carbide epitaxy is your advanced procurement option for producing high-performance 4H-SiC and 6H-SiC epitaxial layers used in wide bandgap semiconductor devices. SiC epitaxy enables the formation of defect-controlled, dopant-engineered epitaxial layers critical for high-power, high-frequency, and high-temperature electronic devices.

Our offering includes specialized components such as SiC epitaxial susceptors, SiC-coated wafer holders, and epitaxy process rings, tailored for use in horizontal and vertical MOCVD and CVD reactors, including platforms by Veeco, Aixtron, and LPE. Veteksemicon’s parts are coated with high-purity CVD SiC, ensuring chemical compatibility, temperature uniformity, and minimal contamination during epitaxial layer growth.

Silicon carbide epitaxy is essential for fabricating power MOSFETs, IGBTs, and RF components, particularly in automotive, energy, and aerospace applications. The epitaxial process requires extremely precise control over doping concentration, layer thickness, and crystallographic orientation, which is why substrate compatibility and thermal stability of reactor parts are critical.

Relevant terms in this category include 4H-SiC epitaxial wafer, low-defect-density epitaxy, SiC epi-ready substrates, and wide bandgap semiconductors. Veteksemicon supports both research-scale and volume production needs with stable, repeatable, and thermally robust component solutions.

To learn more about our silicon carbide epitaxy support materials, visit the Veteksemicon product detail page or contact us for detailed specifications and engineering support.

Minangka Produsen lan supplier profesional Silicon Carbide Epitexy ing China, kita duwe pabrik dhewe. Apa sampeyan mbutuhake layanan khusus kanggo nyukupi kabutuhan wilayah tartamtu utawa pengin tuku sing digawe lan awet sing digawe ing China, sampeyan bisa ninggalake pesen.

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+86-18069220752
Fax
+86-579-87223657
E-mail
anny@veteksemi.com
alamat
Jalan Wangun, Street Ziyang, Wuyi County, Jinhua City, Provinsi Zhejiang, China

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Silicon Carbide Epitexy

Telung jinis tungku wutah epitoxial lan inti aksesoris inti

Komponen inti sing cocog yaiku:

(a) bagean inti utama horisontal part- setengah bagean kasusun saka

(b) jinis planet tembok anget

(c) jinis tembok teyeng-termal

Pemegangan Carbide Carbide Coating Wefer

Susceptor wafer wafer wafer wafer

Dering Sealing SIC Kanggo Epitexy

Single Wafer Epi Graphite Untertaker

CVD Fokus CVD

Komponen AIxtron G5 + Ceiling

Kirim Pitakonan

Kode QR

Babagan awake dhewe

Produk

Hubungi Kita

Telpon

Fax

E-mail

alamat