Produk

Silicon Carbide Epitexy


Persiapan epitaries carbide berkualitas tinggi gumantung ing teknologi lan peralatan lan peralatan sing apik. Saiki, metode pertumbuhan epitails epitails sing paling akeh digunakake yaiku deposisi uap kimia (CVD). Nduwe kaluwihan kontrol trenyun film ketebalan epitise lan konsentrasi, tingkat pertumbuhan moderat, kontrol proses kanthi otomatis, lan liya-liyane, lan minangka teknologi sing bisa dipercaya kanthi komersial.


Silikon Carbide CVD Epitexy umume ngetrapake tembok panas utawa peralatan cvd tembok, sing njamin lampahing epitimo 4h kristal, ing antarane negara aliran udara sing dhuwur, bisa uga ana ing antarane tingkat aliran udara lan reaktor struktur vitor.


Ana telung pratondho utama kanggo kualitas tungku epitixial, sing pertama yaiku kinerja pertumbuhan ECitoxial, kalebu keseranan kerempat, kanthi nggunakake keseragaman, tingkat kekurangan; Sing nomer loro yaiku kinerja suhu saka peralatan kasebut dhewe, kalebu tingkat pemanasan / adhem, suhu maksimal, keseragaman suhu; Pungkasan, kinerja biaya peralatan kasebut dhewe, kalebu rega lan kapasitas unit siji.



Telung jinis tungku wutah epitoxial lan inti aksesoris inti


CVD tembok panas cvd (model khas PE1O6 saka perusahaan LPE PE1O6 saka LPE Planet CVD (dituduhake dening model cvd tembok (sing khas - minangka model sing paling panas ing AIxtron G5ww) minangka solusi teknis epitraam sing wis diwujudake ing aplikasi komersial ing tahapan iki. Telung piranti teknis uga duwe ciri dhewe lan bisa dipilih miturut permintaan. Struktur kasebut dituduhake kaya ing ngisor iki:


Komponen inti sing cocog yaiku:


(a) bagean inti utama horisontal part- setengah bagean kasusun saka

Insulasi Downtream

Insulasi utama sisih ndhuwur

Halfmoon ndhuwur

Penebat hulu

Piece Transisi 2

Piece Transisi 1

Nozzle Air njaba

Torkel tapered

Nozzle gas Outer argon

Nozzzle gas Argon

WAFER Dhukungan piring

Pin Center

Pengawal Pusat

Tutup Perlindungan Downstream

Tutup perlindungan tengen mudhun

Tutup pangreksan kiwa

Tutup Perlindungan Tengen Upstream

Tembok sisih

Cincin grafit

Perlindungan sing dirasakake

Nyengkuyung krasa

Blok kontak

Silinder outlet gas



(b) jinis planet tembok anget

Disk Planetik SIC lapisan & disk planet planet


(c) jinis tembok teyeng-termal


NUFLare (Jepang): Perusahaan iki nawakake tungku vertikal vertikal dual-ramab sing nambah kanggo ngasilake produksi. Peralatan kasebut duwe rotasi kanthi cepet nganti 1000 révolusi saben menit, sing regane migunani banget kanggo keseragam epitoxial. Kajaba iku, arah AirFlow beda karo peralatan liyane, kanthi vertikal mudhun, saéngga nyuda partikel partikel lan nyuda kemungkinan tetesan partikel mudhun ing wafer partikel. Kita nyedhiyakake komponen grafit sing ditutupi ing inti kanggo peralatan iki.


Minangka supplier komponen peralatan epitaksi SIC, Sikmikondduktor setya menehi pelanggan komponen kanthi kualitas tinggi kanggo ndhukung sukses epitexy SIC.



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Nozzle Coating CVD SiC

Nozzle Coating CVD SiC

Nozzle Coating CVD SiC minangka komponen penting sing digunakake ing proses epitaksi LPE SiC kanggo nyetop bahan karbida silikon sajrone manufaktur semikonduktor. Nozel iki biasane digawe saka bahan silikon karbida sing suhu dhuwur lan stabil kanthi kimia kanggo njamin stabilitas ing lingkungan pangolahan sing atos. Dirancang kanggo deposisi seragam, dheweke duwe peran penting kanggo ngontrol kualitas lan keseragaman lapisan epitaxial sing ditanam ing aplikasi semikonduktor. Welcome priksaan luwih.
Pelindung CVD Coating Protector

Pelindung CVD Coating Protector

Vetek Sik Sik Sik Sik Sikmonductor's CVD Sikmonductor sing digunakake yaiku Epitexy SIC LPE, istilah "lpe" biasane nuduhake epitexy tekanan rendah (LPE) kanthi pemendangan uap kimia sing kurang meksa (LPCVD). Ing Pabrik Semikonduktor, LPE minangka teknologi proses penting kanggo ngembang film tipis tunggal kristal, asring digunakake kanggo tuwuh lapisan silikon epitoxial utawa lapisan epitornduktor liyane.pls ora ragu-ragu hubungi kita kanggo pitakonan liyane.
SiC Coated Pedestal

SiC Coated Pedestal

Vetek Semiconductor profesional ing lapisan lapisan CVD CVD, lapisan lapisan grafit lan silikon karbida. Kita nyedhiyakake produk OEM lan ODM kaya Payestal Coated Sic, Chefer Chuck, Trik Wefer, Kita bisa nyedhiyani piranti kanthi cepet ing ngisor 5ppm.Looking maju Saka sampeyan rauh.
SiC Coating Inlet Ring

SiC Coating Inlet Ring

Vetek semikonduktor luwih unggul ing kolaborasi klien kanggo kerajinan desain bespoke kanggo cincin plancongan lapisan sing cocog karo kabutuhan khusus. Dering lapisan cilik kasebut minangka direkayasa kanthi apik kanggo aplikasi sing beda-beda kayata aplikasi SIC CVD lan Epitexy Silicon Carbide. Kanggo solusi dering lapisan mlebu sic sing cocog, aja ragu-ragu kanggo nggayuh semikonduktor dokter kanggo pitulung pribadi.
Cincin pra-Panas

Cincin pra-Panas

Cincin pra-panas digunakake ing proses epitudistor semikonduktor kanggo nglamar wafer lan nggawe suhu luwih stabil lan seragam, sing penting kanggo tuwuhing epitisme sing bermutu tinggi. Vetek semiconduktor kanthi ketat ngontrol kemurnian produk iki kanggo nyegah impurities saka suhu dhuwur.Welcome kanggo duwe diskusi luwih lanjut karo kita.
Wafer angkat pin

Wafer angkat pin

Vetek Semiconduktor minangka produsen pin angkat unta wafer lan inovator ing China.We wis khusus ing lapisan SIC ing lumahing grafit sajrone pirang-pirang taun. We nawakake PIN angkat wafer EPE kanggo proses Epi. Kanthi rega sing berkualitas tinggi lan kompetitif, kita bakal sambutan sampeyan ngunjungi pabrik kita ing China.

Veteksemicon silicon carbide epitaxy is your advanced procurement option for producing high-performance 4H-SiC and 6H-SiC epitaxial layers used in wide bandgap semiconductor devices. SiC epitaxy enables the formation of defect-controlled, dopant-engineered epitaxial layers critical for high-power, high-frequency, and high-temperature electronic devices.


Our offering includes specialized components such as SiC epitaxial susceptors, SiC-coated wafer holders, and epitaxy process rings, tailored for use in horizontal and vertical MOCVD and CVD reactors, including platforms by Veeco, Aixtron, and LPE. Veteksemicon’s parts are coated with high-purity CVD SiC, ensuring chemical compatibility, temperature uniformity, and minimal contamination during epitaxial layer growth.


Silicon carbide epitaxy is essential for fabricating power MOSFETs,  IGBTs, and RF components, particularly in automotive, energy, and aerospace applications. The epitaxial process requires extremely precise control over doping concentration, layer thickness, and crystallographic orientation, which is why substrate compatibility and thermal stability of reactor parts are critical.


Relevant terms in this category include 4H-SiC epitaxial wafer, low-defect-density epitaxy, SiC epi-ready substrates, and wide bandgap semiconductors. Veteksemicon supports both research-scale and volume production needs with stable, repeatable, and thermally robust component solutions.


To learn more about our silicon carbide epitaxy support materials, visit the Veteksemicon product detail page or contact us for detailed specifications and engineering support.


Minangka Produsen lan supplier profesional Silicon Carbide Epitexy ing China, kita duwe pabrik dhewe. Apa sampeyan mbutuhake layanan khusus kanggo nyukupi kabutuhan wilayah tartamtu utawa pengin tuku sing digawe lan awet sing digawe ing China, sampeyan bisa ninggalake pesen.
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